Detection of Interconnect Failure Precursors Using Rf Impedance Analysis

Title of Document: DETECTION OF INTERCONNECT FAILURE PRECURSORS USING RF IMPEDANCE ANALYSIS Daeil Kwon, Doctor of Philosophy (Ph.D.), 2010 Directed By: Chair Professor and Director, Michael Pecht, Department of Mechanical Engineering Many failures in electronics result from the loss of electrical continuity of common board-level interconnects such as solder joints. Measurement methods based on DC resistance such as event detectors and data-loggers have long been used by the electronics industry to monitor the reliability of interconnects during reliability testing. DC resistance is well-suited for characterizing electrical continuity, such as identifying an open circuit, but it is not useful for detecting a partially degraded interconnect. Degradation of interconnects, such as cracking of solder joints due to fatigue or shock loading, usually initiates at an exterior surface and propagates towards the interior. A partially degraded interconnect can cause the RF impedance to increase due to the skin effect, a phenomenon wherein signal propagation at frequencies above several hundred MHz is concentrated at the surface of a conductor. Therefore, RF impedance exhibits greater sensitivity compared to DC resistance in detecting early stages of interconnect degradation and provides a means to prevent and predict an important cause of electronics failures. This research identifies the applicability of RF impedance as a means of a failure precursor that allows for prognostics on interconnect degradation based on electrical measurement. It also compares the ability of RF impedance with that of DC resistance to detect early stages of interconnect degradation, and to predict the remaining life of an interconnect. To this end, RF impedance and DC resistance of a test circuit were simultaneously monitored during interconnect stress testing. The test vehicle included an impedance-controlled circuit board on which a surface mount component was soldered using two solder joints at the end terminations. During stress testing, the RF impedance exhibited a gradual non-linear increase in response to the early stages of solder joint cracking while the DC resistance remained constant. The gradual increase in RF impedance was trended using prognostic algorithms in order to predict the time to failure of solder joints. This prognostic approach successfully predicted solder joint remaining life with a prediction error of less than 3%. Furthermore, it was demonstrated both theoretically and experimentally that the RF impedance analysis was able to distinguish between two competing interconnect failure mechanisms: solder joint cracking and pad cratering. These results indicate that RF impedance provides reliable interconnect failure precursors that can be used to predict interconnect failures. Since the performance of high speed devices is adversely affected by early stages of interconnect degradation, RF impedance analysis has the potential to provide improved reliability assessment for these devices, as well as accurate failure prediction for current and future electronics.